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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS IISOL 1mA t = 1min t = 1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
IXFN36N110P
VDSS = ID25 = RDS(on) trr
1100V 36A 240m 300ns
Maximum Ratings 1100 1100 30 40 36 110 18 2 20 1000 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/ 11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features
* International standard package * Encapsulating epoxy meets
UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride
isolation
* Fast recovery diode * Unclamped Inductive Switching (UIS)
Mounting torque Terminal connection torque
rated
* Low package inductance
- easy to drive and to protect Advantages
* Easy to mount * Space savings * High power density
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C
Characteristic Values Min. Typ. Max. 1100 3.5 6.5 300 50 4 240 V V nA A mA m
Applications: High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2008 IXYS Corporation, All rights reserved
DS99902A (04/08)
IXFN36N110P
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 20 32 23 1240 110 0.85 60 54 94 45 350 117 157 S nF pF pF ns ns ns ns nC nC nC 0.125 C/W C/W SOT-227B Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s VR= 100V, VGS = 0V Characteristic Values Min. Typ. Max. 36 144 1.5 300 2.3 16 A A V ns C A
Notes1: Pulse test, t 300s; duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN36N110P
Fig. 1. Output Characteristics @ 25C
40 35 30 VGS = 10V 7V 90 80 70 60 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 5V 6V
7V
50 40 30 20 10 0 0 5 10 15 20 25 30 5V
6V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
40 35 30 VGS = 10V 8V 3.0 2.8 2.6
Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 I D = 36A I D = 18A
ID - Amperes
25 20 15
7V
6V 10 5 0 0 2 4 6 8 10 12 14 16 18 20 5V
0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current
2.6 2.4 2.2 VGS = 10V TJ = 125C 40 35 30
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
ID - Amperes
TJ = 25C
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 80 90
25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS Corporation, All rights reserved
IXFN36N110P
Fig. 7. Input Admittance
65 60 55 50 TJ = 125C 25C - 40C 70 60 TJ = - 40C 80
Fig. 8. Transconductance
g f s - Siemens
45
ID - Amperes
40 35 30 25 20 15 10 5 0 4.0 4.5 5.0 5.5
50 40 30 20 10 0
25C
125C
6.0
6.5
7.0
7.5
8.0
8.5
0
10
20
30
40
50
60
70
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
100 90 80 12 70 16 14 VDS = 550V I D = 18A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
60 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ = 125C
VGS - Volts
TJ = 25C
10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450 500
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1.000
Fig. 12. Maximum Transient Thermal Impedance
Capacitance - PicoFarads
10,000
Ciss
1,000 Coss
Z(th)JC - C / W
35 40
0.100
0.010
100
f = 1 MHz
10 0 5 10 15 20 25 30
Crss
0.001 0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_36N110P(99) 04-01-08-A

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